| PART |
Description |
Maker |
| FQT13N06L FQT13N06LTF FQT13N06LL99Z |
60V LOGIC N-Channel MOSFET
60V N-Channel Logic level QFET
60V LOGIC N-Channel MOSFET 2800 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
| 5SDD49H2800 |
4865 A, 2800 V, SILICON, RECTIFIER DIODE
|
ABB SWITZERLAND LTD SEMICONDUCTORS
|
| SGA-2363-TR1 SGA-2363 |
DC-2800 MHz Silicon Germanium HBT Cascadeable Gain Block
|
Stanford Microdevices
|
| SP8855E/IG/HPAR |
PLL FREQUENCY SYNTHESIZER, 2800 MHz, PQCC44 PLASTIC, QCC-44
|
Zarlink Semiconductor, Inc.
|
| ADE-R20LH |
High Reliability Mixer Level 10 (LO Power 10 dBm) 1500 to 2800 MHz
|
Mini-Circuits
|
| MCA1-80LH |
Frequency Mixer wide bacd Level 10 (LO Power 10dBm) 2800 to 8000 MHz
|
MINI[Mini-Circuits]
|
| HMC440QS16G06 HMC440QS16G |
HBT DIGITAL PHASE-FREQ. DETECTOR, 10 - 1300, MHz w/ 5-BIT COUNTER, 10 - 2800 MHz
|
Hittite Microwave Corporation
|
| LTC3527EUDTRPBF |
Dual 800mA/400mA, 1.2MHz/2.2MHz Synchronous Step-Up DC/DC Converters; Package: QFN; No of Pins: 10; Temperature Range: -40°C to 125°C 0.8 A DUAL SWITCHING CONTROLLER, 2800 kHz SWITCHING FREQ-MAX, PQCC16
|
Linear Technology, Corp.
|
| TRB6426 TRB6430 TRB6428 TRB6432 |
2600 V, rectifier diode
3000 V, rectifier diode
2800 V, rectifier diode
3200 V, rectifier diode
|
TRANSYS Electronics Limited
|
| HMC441 HMC440QS16G HMC441LM1 |
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER/ 7.0 - 15.5 GHz
HBT DIGITAL PHASE-FREQUENCY DETECTOR/ 10 - 1300 MHz/ w/ INTEGRATED 5-BIT COUNTER/ 10 - 2800 MHz
800000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.0 - 18.0 GHz
|
美国讯泰微波有限公司上海代表
HITTITE[Hittite Microwave Corporation]
|
| FD1000FH-56 |
1000 A, 2800 V, SILICON, RECTIFIER DIODE
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
Mitsubishi Electric Semiconductor
|
